Beschrijving
1.8mm NPN Phototransistor SGPT2055B
plaats van herkomst
Guangdong, China
type
NPN silicon phototransistor
toepassing
Algemene Purpose
Supplier Type
Originele fabrikant
Media Beschikbaar
Datasheet
品名
1.8x2.4x3.3mm Phototransistor SGPT2055B
Huidige-Collector (Ic) (Max)
20mA
Voltage-Collector Emitter Afbraak (Max)
30V
Bedrijfstemperatuur
-20~+85℃
Mounting Type
Through Hole
Toepassingen
Infrared applied system
Range of Spectral Bandwidth
840-1100nm
Wavelength of Peak Sensitivity
940nm
Collector Emitter Breakdown Voltage
>30 V
Emitter Collector Breakdown Voltage
>6 V
Collector Dark Current
<100 nA
Collector Emitter Saturation Voltage
<=0.2 V
On State Collector Current
2.0 mA