Montage Type
Chassis Mount
Beschrijving
IGBT Silicon Modules
plaats van herkomst
Guangdong, China
naam van het merk
ORIGINAL
Collector- Emitter Voltage VCEO Max
1.2 kV
Collector-Emitter Saturation Voltage
1.75 V
Continuous Collector Current at 25 C
400A
Gate-Emitter Leakage Current
400 nA
Pd - Power Dissipation
2.4 kW
Minimum Operating Temperature
- 40 C
Maximum Operating Temperature
+ 150 C
Maximum Gate Emitter Voltage
20 V